Graduate Student: Rebekah Graham
Current 65nm technologies use copper interconnects with dimensions of 90nm
Our laboratory is fabricating interconnect structures with 30nm dimension
Three generations beyond current technologies: Questions….
Will the resistivity of copper be limited by mesoscopic scattering effects?
Can copper grains grow in sub-50nm structures?
Will eltromigration reliability be degraded?
Will stress gradients exceed the yield stress of the interconnect layers?